| 摘要 |
PURPOSE:To attain element disposition enabling improvement of the characteristics of a thin film transistor constituting SRAM and to widen an operation margin. CONSTITUTION:An offset region O1 of a thin film transistor constructed of a second polysilicon layer 19 and a silicon thin film 29 and a gate electrode 5 of an MOS transistor positioned below the region are put at the same potential by a contact 20. Therefore the offset region O1 is controlled by the gate electrode 5. Effects of reducing a leak current of the thin film transistor and increasing an ON current are produced and an operation margin of SRAM can be widened. |
