| 摘要 |
PURPOSE:To provide a field-effect transistor with a structure to increase the times for writing and erasing information. CONSTITUTION:An SiO2 film 47 and Pb(Zr-Ti)O3, namely a thin film 49 of PZT, are formed on a p-type silicon substrate 41 in this order as a gate insulation film 51. A gate electrode (control gate) 53 is provided on the gate insulation film 51. A source region 43 and a drain region 45 are provided at each side of the silicon substrate 41. Therefore, an FET can be maintained to be on or off utilizing the polarization of the PZT thin film 49, thus forming '1' or '0' state needed for a memory cell. Since no current needs to be fed to the gate insulation film, deterioration in the insulation film can be suppressed, thus increasing the times of writing and erasing information. |
