| 摘要 |
PURPOSE: To enable acquisition of a disconnecting margin during Bloch line pair conversion by providing a magnetic film of a prescribed thickness of a substrate and allowing a Bloch line width, magnetic exchange constant, and saturation magnetization to satisfy a prescribed relation. CONSTITUTION: A magnetic film 2 is garnet having a composition of (TR3 )(FeX)5 O12 . However, TR is selected from Y, Sm, Lu, Bi, Ca, Gd, and Pr, while X from Al, Ga, Si, and Ge. In addition,Λ0 =A/2πMs and h/Λ0 <14 are satisfied. Further, as a device 10 for cutting a magnetic domain, it is provided with a band-like magnetic domain 6 having the width 1 in the magnetic film, and with conductive band pieces 10a, 10b which are parallel to each other with a maximum width W, which are supported by the magnetic film 2, and which are perpendicular to the magnetic domain; a spacing G against an adjacent piece and a spacing D against the magnetic film 12 are determined as prescribed; and a current pulse is added to the two conductive band pieces. Under this structure, Bloch line memory is obtained which is capable of acquiring a cutting margin during the conversion to (+, +) pair, (-, -) pair at the time of reading of a line and writing of line pairs.
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