| 摘要 |
PURPOSE: To provide a CMOS-type polysilicon thin-film transistor which is improved in electronic signal characteristic, using a source/drain region as metal layers and capable of consisting an LCD drive circuit. CONSTITUTION: A source region 34-1 and a drain region 34-2 are formed, being provided with a laminated layer structure of anisotropic Si layers 32-1 and 32-2 and metal layers 33-1 and 33-2 of MO and W on an insulating substrate 31, and patterning exposed edges to have an inclined structure. An active semiconductor layer 35 is formed on a drain region between the source region 34-1 and the drain region 34-2, overlapping the upper surface that is adjacent to the facing edges of these regions. Each of a source electrode 39-1 and a drain electrode 39-2 which are isolated by an insulating film 36 is formed, connected to the source region 34-1 and the drain region 34-2 through each of contacts 37-1 and 37-2. A gate electrode 38 is formed on the upper part of an active semiconductor layer 35 which is isolated by the insulating film 36 at a distant from it. |
