发明名称 |
Self-aligned contact process for complementary field-effect integrated circuits |
摘要 |
A method for making a NMOS self-aligned contact in CMOS circuits without an extra mask is described. The maskless contact technique makes use of the fact that the blanket N-type implant, self-aligned to exposed field-oxide edge, will not change the P+ diffusion to N-type. The net P+ concentration in the contact region is reduced slightly but does not degrade the PMOS device performance.
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申请公布号 |
US5283203(A) |
申请公布日期 |
1994.02.01 |
申请号 |
US19920843705 |
申请日期 |
1992.02.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GILL, MANZUR;SHUM, DANNY |
分类号 |
H01L21/28;H01L21/74;H01L21/8238;H01L23/485;H01L27/092;H01L27/115;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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