| 摘要 |
<p>PURPOSE:To prevent the generation of etching residues of transparent conductive films by forming pixel electrodes into the laminated structures consisting of the plural transparent conductive films varying in film quality. CONSTITUTION:Gate electrodes 11 are formed on a glass substrate 10 and a gate insulating film 13 and a semiconductor layer 12 are formed thereon. Source electrodes 14 and drain electrodes 15 are then formed and thereafter, the first transparent conductive film 16 consisting of zinc oxide is deposited at 100 angstrom thickness and is wet etched by photolithography using a suitable etchant and is formed to a prescribed shape. The second transparent conductive film 17 consisting of indium tin oxide is further deposited thereon and is wet etched by the suitable etchant to pattern the pixel electrodes 18. A passivation film 19 is thereafter formed. The reaction layer of the film quality of the first layer 16 and the ground surface is substantially prevented in such a manner and the easily etachable film is formed, by which the generation of the etching residues is prevented. The wiring resistance is lowered as well by forming the second layer 17 of a low-resistance film.</p> |
