MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a method for manufacturing a semiconductor device with a high integration degree and a large capacity in an easy process. CONSTITUTION:A basic pattern 2 is formed on a substrate 1. A semi-insulating or a conductive layer 3 is formed on the whole surface thereof. An electrode pattern (sidewall) 3 is formed on the side surface of the basic pattern 2 with anisotropic etching. The basic pattern is removed to form a dielectric layer 6 for a capacitor on the whole surface thereof. The one side electrode of the capacitor is formed on the dielectic layer 6. A very fine pattern may be easily obtained by performing the patterning of a sidewall.