FORMING METHOD FOR QUANTUM FINE LINE ON BASE

摘要

PURPOSE:To provide a method for forming a quantum fine line in which diameters, lengths and directions of fine lines are substantially uniform among the lines and a desired quantum effect can be expected by making the diameters of the lines even in a longitudinal direction of the lines substantially uniform. CONSTITUTION:A method for forming quantum fine lines 7 on a base 1 comprises the steps of ion implanting the base 1 to be formed with the fine lines, and anodizing the base 1 in hydrofluoric acid or plasma P.