| 摘要 |
PURPOSE:To prevent recombination of photovoltaic carrier, to improve carrier range of open voltage and hole, and to reduce a variation in a photoelectric conversion efficiency at the time of temperature change. CONSTITUTION:A p-type layer 105 formed of a silicon non-single crystal semiconductor material, a photoconductive layer (a layer formed of a plurality of type layers) and an n-type layer 102 are at least laminated to be formed. The photoconductive layer is formed of a laminated structure having at least an i-type layer 103 deposited by a microwave plasma CVD method disposed at the side of the layer 102, and an i-type layer 104 deposited by an RF plasma CVD method disposed at the side of the layer 105. The layer 103 disposed by the microwave plasma CVD method contains at least silicon atoms and carbon atoms in such a manner that the position where the band gap assumes a minimum is at the i-type layer formed to be deviated toward a p-type layer from the center of the i-type layer. And, the layer 104 deposited by the RF plasma CVD method contains at least silicon atoms and has a thickness of 30nm or less. |
