| 摘要 |
PURPOSE:To restrain not only a lower electrode and a ferroelectric film from mutually diffusing into each other when the film is formed but also a capacitor from decreasing in capacitance as a whole due to a diffusion barrier layer of low capacitance when the capacitive film of a DRAM is formed of ferroelectric. CONSTITUTION:A diffusion barrier ferroelectric film 14 is provided between a lower electrode 13 and a capacitive ferroelectric film 15 to prevent interdiffusion between the lower electrode 13 and the capacitive ferroelectric film 15, and a ferroelectric body high in dielectric constant is used as a barrier layer, whereby a capacitor of this design can be formed without decreasing in capacitance as a whole. |
