| 摘要 |
PURPOSE:To increase an area of a capacitor larger and to increase a capacity of the capacitor by roughing a rough surface of a charge storage layer in the same design rule. CONSTITUTION:A method for manufacturing a semiconductor memory comprises the steps of forming a polycrystalline silicon layer 4 having a rough surface as a charge storage layer on a semiconductor substrate, selectively forming a resist 10 in a recess 9a of the rough surface of the layer 4, removing part of the layer 4 with the resist 10 as a mask, forming a capacitor insulating film on the layer 4, and forming a plate electrode on a capacitor insulating film. |
