Semiconductor device multilayer metal layer structure including conductive migration resistant layers

摘要

A multilevel metallization structure for a semiconductor device having an antireflective film and a migration resistant film. The antireflective film is formed on a lower metallization and an dielectric inter-level film is formed on the antireflective film. The dielectric inter-level film has an opening hole for exposing the surface of the lower metallization. The migration resistant film is formed on the dielectric inter-level film and the surfaces of side walls of the opening hole. The upper metallization is formed on the migration resistant film and inside the opening hole so as to directly connect to the lower metallization.