发明名称 |
Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol |
摘要 |
A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
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申请公布号 |
US5281508(A) |
申请公布日期 |
1994.01.25 |
申请号 |
US19920935131 |
申请日期 |
1992.08.21 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
KOHARA, HIDEKATSU;TANAKA, HATSUYUKI;MIYABE, MASANORI;ARAI, YOSHIAKI;ASAUMI, SHINGO;NAKAYAMA, TOSHIMASA;YOKOTA, AKIRA;NAKANE, HISASHI |
分类号 |
C08G8/08;C08K5/42;G03F7/032;(IPC1-7):G03F7/023 |
主分类号 |
C08G8/08 |
代理机构 |
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