| 摘要 |
<p>PURPOSE:To obtain large mobility in TFT and to drive a device at high response by forming the TFT as the peripheral circuit to drive an active matrix on a single crystal silicon film. CONSTITUTION:Single crystal silicon films 202, 203 providing the peripheral circuit to drive an active matrix are formed on an insulating substrate 201. In the area except for the single crystal silicon films 202, 203, polycrystalline silicon film or noncrystalline silicon film 204 is formed to form picture element transistors which drive picture element electrodes. The single crystal silicon film 202, 203 have thickness larger than the thickness of the polycrystalline silicon film or noncrystalline silicon film 204. Namely, by forming the silicon film thick, mobility in the electric characteristics of TFT to be formed can be improved, and thereby, operation speed of the peripheral circuit can be increased.</p> |
