| 摘要 |
The method for a compound semiconductor device comprises the following processes: (a) forming the 1st, 2nd, 3rd, 4th, 5th, and the 6th semiconductor layer on the whole surface of a semi-insulating compound semiconductor sequentially and exposing the 3rd semiconductor layer; (b) forming a groove for, device separating region on one side of the exposed 3rd semiconductor layer for separating devices; (c) forming the 2nd conductor type diffusion region overlapping with the 1st semiconductor layer to a fixed thickness by diffusion to one side of the 6th semiconductor layer on the LD region; (d) forming the 1st conductor type ion implantation region on both the ends of the fixed are of the 3rd semiconductor layer at the HEMT region; (e) forming the 2nd conductor type electrode and the 1st type electrode on the 2nd conductor type diffusion region of LD region and on the other area of the 6th semiconductor layer, respectively; (f) forming a source and a drain electrode for HEMT on HEMT region; and (g) forming a gate electrode on the exposed 3rd semiconductor layer.
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