LAYER CONTACT APPARATUS AND MEHTOD OF SEMICONDUCTOR

摘要

The interconnection structure electrically connecting a thin conductive layer and a metallisation, comprises a semiconductor substrate, an insulating layer coated on the substrate, a thick conductive layer formed on a certain portion of the insulating layer, interlaid insulating layer covering the thick conductive layer, a contact hole formed within the interlaid insulating layer, a thin conductive layer with a vertical structure formed in the contact hole and the horizontal structure formed on the interlaid insulating layer. A second interlaid insulating layer covers the thin conductive layer, with a second contact hole formed within the two interlaid insulating layers and crossing the first contact hole. Matallisation fills the second contact hole and is formed on the second interlaid insulating layer.