| 摘要 |
PURPOSE:To easily execute a lithography stage using a photoresist for which a catalyst reaction is utilized with high accuracy. CONSTITUTION:This pattern forming method consists in applying a photoresist material 21, for which the catalyst reaction is utilized, on a thin film 11 to be worked, exposing the photoresist material by radiations, such as UV rays, electron rays and laser beams, to form latent images of circuit patterns on the photoresist resist film and progressing the catalyst reaction, then removing the unnecessary parts of the photoresist resist film. The photoresist film which can remove the catalysts to be diffused into unexposed parts or can annihilate the effect as the catalysts is used in this pattern forming method. The photoresist contg. a basic material 31 which removes the catalysts to be diffused into the unexposed parts or annihilates the effect as the catalysts is used if the catalysts are hydrogen cations 32 or other cations. Or, the photoresist contg. the basic material which loses basic property by the exposure is used. |
