| 摘要 |
The thin film transistor having a strip type gate address line and a source signal line, comprises an insulating layer formed on the gate address line, and a semiconductor layer formed on the insulating layer, which serves as a channel conductive layer. The source signal line includes a part corresp. to a channel width of the thin film transistor and has a rounded contour. The gate address line has a rounded contour portion. A drain electrode is arranged in parallel with, and spaced from, the source signal line and has a rounded contour confronting the rounded contour of the source signal line and the gate address line. The rounded contour of the gate address line, the source signal line and the drain electrode are of the same length.
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