Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterelements

摘要

A method of manufacturing a semiconductor light emitting device comprises the steps of: forming a p-InP first semiconductor layer (11) on a p-type semiconductor substrate (10) by a first growth or diffusion; forming a groove (15) shaped like a stripe in the substrate and the first semiconductor layer; and successively forming a p-InP second semiconductor layer (12), a p or n-InGaAsP third semiconductor layer (13) and an n-InP fourth semiconductor layer (14) in the regions including the inner and outer portions of the grooves by the second growth. In this manufacturing method, the carrier concentration of the p-type impurity in the first semiconductor layer is selected to be higher than the carrier concentration in the fourth semiconductor layer. As a result, by the growth process of the respective semiconductor layers in the inner and outer portions of the groove or by the heat treatment after a growth process, the impurity can be diffused from the first semiconductor layer into the fourth semiconductor layer and the p-n junction faces can be moved from the inner surfaces of the groove into the fourth semiconductor layer.