| 摘要 |
PURPOSE:To reduce the warp of a substrate and raise production yield, by setting a gradient on the P concentration distribution of a tapered GaAs1-xPx layer which constitutes a light emitting diode and by cancelling the stress of the layers which constitute the diode. CONSTITUTION:A tapered Ga1-xPx layer 2 and a GaAs1-xPx layer 3 are grown and laminated on a GaAs layer 1 to compose a light emitting diode. To reduce the warp of the substrate of the diode, the layer 2 is set at a P concentration gradient. the first stress due to the thermal expansion coefficient difference between the layers 1, 2, the second stress due to the lattice constant difference between the layers and the third stress due to the introduction of dislocation based on the lattice constant difference are caused to cancel one another to reduce the stress. As a result, resultant stress 10 due to lattice strain, misfit dislocation and gradient dislocation and convexly warping stress 11 due to the thermal expansion coefficient difference and P concentration gradient in the layer 2 cancel each other so that resultant stress as shown by a curve 12 remains. |
