| 摘要 |
<p>PURPOSE:To prevent a thin film transistor from channel leak and also leak between a wiring and electrode. CONSTITUTION:A gate electrode 102, gate insulative film 104, island-shaped a-Si film 104, n<+> type a-Si film 105 and source electrode 106, and a drain electrode 107 are formed on a glass base board 101, and before forming a clear conductive film, an insulative thin film 108 is formed over the whole board surface, and only the area on the source electrode 106 where contact is formed is removed by etching. Then clear conductive film is formed and subjected to the patterning process to form pixel electrodes 109. The insulative thin film 108 exposed is removed by etching, and channel cutting is made to form a groove 110.</p> |
