| 摘要 |
<p>PURPOSE:To restrain that a readout characteristic is changed due to the difference in a distance between a VSS line and each memory cell and to make the readout characteristic uniform. CONSTITUTION:A data signal which has been read out from a memory cell is output after it has been corrected by an operating amplifier 11 in a sense amplifier 3 operated by a signal from a row-address decoder 2. Thereby, a source potential difference which is caused by the difference in a distance between VSS lines 6, 6 and each memory cell is eliminated, anti the readout characteristic of the title memory device is made uniform.</p> |
