发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PURPOSE:To improve a productive yield, by making an active element and a passive element separately and joining good ones thereof to form an IC chip. CONSTITUTION:In a semiconductor device, passive element chips 9 and 11, and an FET chip as an active element chip on the main face are provided. The FET chip on a main face of a semi-insulating substrate 1 is formed in a diffusion step, in which a channel 2, a source region 3, and a drain region 4 are formed. A gate electrode 7 for the FET on the channel 2 is provided, and a source electrode 5 and a drain electrode 6 are formed. The gate electrode 7 is connected through a bonding wire 15 to the input-side passive element 9 in the passive element chip, while the drain electrode 6 is connected to the output-side passive element device 11. Moreover, good-quality passive and positive elements are joined together to form an IC chip, and a productive yield can be improved as compared with a case of an MMIC, in which both the elements should be good in quality at the same time.</p>
申请公布号 JPH065881(A) 申请公布日期 1994.01.14
申请号 JP19920162480 申请日期 1992.06.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 AZUMA CHINATSU;NISHIJIMA MASAAKI;OTA TOSHIMICHI;ISHIKAWA OSAMU
分类号 H01L25/00;H01L21/822;H01L23/48;H01L25/04;H01L25/16;H01L25/18;H01L27/04;H01L29/80;(IPC1-7):H01L29/804 主分类号 H01L25/00
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