| 摘要 |
PURPOSE:To thermally stabilize the emitter current of a semiconductor device by connecting stabilizing resistors to all points on the emitter layer thereof in parallel. CONSTITUTION:A base layer 13 and an emitter layer 14 are formed on a semiconductor substrate 16 for operating as a collector, and connecting holes of layers 13 and 14 are formed at an insulating layer 17. A polysilicon layer 18 is formed on the layer 14 in desired resistivity and thickness, an electrode 12 is formed thereon, and the layer 18 between the layer 14 and the electrode 12 is used as an emitter stabilizing resistor. Thus, the stabilizing resistor is disposed on the layer 14 to increase no junction capacity between the stabilizing resistor and the collector. Thus, the stabilizing resistors on the emitter layer are all connected in parallel with the electrode 12 to stabilize the transistor current and thermally stabilize the device. |
