INTEGRATED SEMICONDUCTOR DIODE LASER AND PHOTODIODE STRUCTURE

摘要

Integrated semiconductor structure with optically coupled laser diode and photodiode, both devices having etched, vertical facets. The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.