| 摘要 |
PURPOSE:To maintain a base material at a relatively low temp. and to stick a high- purity thin film thereto by entraining fine raw material particle in a carrier gas passing a plasma forming region, heating and evaporating the same by the plasma of the carrier gas and bringing the vapor thereof and the base material into contact with each other. CONSTITUTION:The carrier gas delivered from a supplying means 10 is passed from a flow pipe 16 in a vacuum vessel 1 to the plasma forming region 31 and is drawn through a base material imposing region 32 and a suction port 29 into a vacuum pump. On the other hand, microwaves are applied to the inside of a cavity resonator 18 by operating a microwave oscillator 21 and the microwaves are acted on the plasma forming region 31 to convert the carrier gas to the plasma. On the other hand, a raw material supporting base 7 is energized from a power supply 9 to heat and evaporate the raw material 8. The formed fine particles are entrained in the carrier gas and are made to arrive at the region 31 where the particles are heated and melted by the plasma increased in density by the microwaves. As a result, the vapor of the metal, etc., evaporated to the atom state is sent together with the carrier gas to the region 32 where the vapor is brought into contact with the base material 28 and is the form of the thin film 33. |
