发明名称 |
Method for fabricating a semiconductor transistor and structure thereof |
摘要 |
A method for fabricating a CMOS field effect transistor with LDD (light doped drain) structure is disclosed. A first gate for an NMOS transistor and a second gate for a PMOS transistor are formed on a semiconductor substrate, and the NMOS and PMOS transistor regions are subjected to different ion implantation processes so as to form a first source and drain of low concentration. After forming a first spacer on the side walls of the gates, the substrate is subjected to another ion implantation so as to form a second source and drain of high concentration for the NMOS transistor. After forming a second spacer on the side surfaces of the first spacers, the substrate is subjected to still another ion implantation so as to form a second source and drain of high concentration for the PMOS transistor. Then is obtained a CMOS transistor provided with a PMOS transistor of LDD structure without increasing the diffusion resistance of an NMOS transistor.
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申请公布号 |
US5278441(A) |
申请公布日期 |
1994.01.11 |
申请号 |
US19910684795 |
申请日期 |
1991.04.15 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KANG, YOUNG-TAE;KANG, RAE-KU;NHO, BYOUNG-HYEOK |
分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L27/02;H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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