发明名称 |
Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate |
摘要 |
A single transistor electrically programmable and erasable memory cell has a substrate of a semiconductor material of a first-conductivity type. Within the substrate are defined source, drain, regions with a channel region therebetween. A first insulating layer is disposed over the substrate and over the source, channel and drain regions. An electrically conductive, re-crystallized floating gate is disposed over the first-insulating layer and extends over a portion of the channel region and over a portion of the drain region to maximize capacitive coupling therewith. A second insulating layer has a top wall portion over the floating gate and a side wall portion immediately adjacent to the floating gate and has a thickness which permits the Fowler-Nordheim tunneling of charges therethrough. An electrically conductive control gate has two electrically connected sections: A first section is over the first insulating layer and is immediately adjacent to the side-wall portion of the second insulating layer. The first section extends over a portion of the channel region and over the source region. A second section is disposed over the top wall portion of the second insulating layer to minimize capacitive coupling with the floating gate.
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申请公布号 |
US5278087(A) |
申请公布日期 |
1994.01.11 |
申请号 |
US19920961256 |
申请日期 |
1992.10.15 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
JENQ, CHING-SHI |
分类号 |
H01L29/423;H01L29/788;(IPC1-7):H01L21/266 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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