| 摘要 |
PURPOSE:To facilitate the film thickness control of a phase shifter at the time of production of the multisection type phase shift reticule. CONSTITUTION:A resist 1 is applied on a glass substrate 2 and is subjected to exposing and developing; thereafter, the glass substrate 2 is formed with prescribed patterns by etching. The resist 11 is again applied on the glass substrate 2 and is subjected to exposing and developing. In succession, an SiO2 film 5 is formed by, for example, a spin coating method on the formed patterns. The prescribed two-stage phase shift reticule is obtd. when the resist 1 is peeled after the film is etched back until the resist 1 is exposed. The shifter film thickness control is executed for the etching time of the glass substrate and at the resist film thickness and, therefore, the film thickness control is relatively easily executed. |
