| 摘要 |
PURPOSE:To obtain a semiconductor device of high density and high performance at a low cost, by reducing the occupied area by a capacitor while keeping the capacitance constant. eliminating difference of capacitor characteristics like permittivity due to the applied voltage direction, and reducing manufacturing process. CONSTITUTION:The surfaces on which dielectric substance 110 of a capacitor comes into contact with electrodes 112, 113 are vertical to a semiconductor substrate 101. The two electrodes of the capacitor are formed at the same time before the dielectric substance is formed. The whole part or a part of the substrate except bonding pads of a wiring layer 107 is covered with the whole part or a part of the dielectric substance. |
