发明名称 Reversible non-volatile switch based on a TCNQ charge transfer complex
摘要 A solid-state synaptic memory matrix (10) having switchable weakly conductive connections at each node (24) whose resistances can be selectably increased or decreased over several orders of magnitude by control signals of opposite polarity, and which will remain stable after the signals are removed, comprises an insulated substrate (16), a set of electrical conductors (14) upon which is deposited a layer (18) of an organic conducting polymer, which changes from an insulator to a conductor upon the transfer of electrons, such as polymerized pyrrole doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ), covered by a second set of conductors (20) laid at right angles to the first.
申请公布号 US5272359(A) 申请公布日期 1993.12.21
申请号 US19900631230 申请日期 1990.12.21
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 NAGASUBRAMANIAN, GANESAN;DISTEFANO, SALVADOR;MOACANIN, JOVAN
分类号 G06N3/063;G11C13/02;H01L29/861;(IPC1-7):H01L29/28 主分类号 G06N3/063
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