发明名称 Sense amplifier for semiconductor memory device
摘要 In a sense amplifier connected to a bit line pair of a semiconductor memory device, a control gate is connected between an amplifying circuit and a transistor for activating the amplifying circuit. The control gate closes only when either of the bit lines is HIGH. When both the bit line are HIGH or LOW, the amplifying circuit does not operate.
申请公布号 US5272670(A) 申请公布日期 1993.12.21
申请号 US19910725786 申请日期 1991.07.08
申请人 SHARP KABUSHIKI KAISHA 发明人 HASHIMOTO, YOSHINORI
分类号 G11C11/419;G11C7/06;G11C11/407;G11C11/409;H03K3/356;(IPC1-7):H03F3/45;G11C7/02;H03K19/21 主分类号 G11C11/419
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