| 摘要 |
PURPOSE:To easily obtain a high-sensitivity positive radiation-sensitive resist composition excellent in dry etching resistance by using a specified radiation- sensitive compd. CONSTITUTION:This composition consists of an alkali-soluble resin and a radiation-sensitive component, and the radiation-sensitive component is the 2,3,4,4'-trihydroxybenzophenone ester of 1,2-naphthoquinonediazide-sulfonic acid. In the high-speed liq. chromatograph measured with a detector of 230nm, the pattern area of the tetraester occupies 25-45% of the total pattern area, and the pattern area of the 3,4,4'-triester occupies 5-30%. A beta trione compd. is preferably incorporated as an additive. The positive radiation-sensitive resist is applied on a substrate, pattern-exposed with an electron beam and then developed with an aq. alkali soln. to form a pattern. |
