| 摘要 |
PURPOSE:To conveniently form a pattern by the three-layer resist process. CONSTITUTION:A lower resist layer 13 is formed on a silicon substrate 11. A poly(siloxane) derivative having an alkoxy group, e.g. di-t-butoxysiloxane, is applied on the layer 13 by spin coating, and the assembly is alkali-treated with 0.27N TMAH soln and heat-treated to form an SiO2 film 15 as the intermediate layer. An upper resist layer 17 is formed on the intermediate layer 15, exposed by an electron beam, further developed and patterned, then CHF3-RIE is applied to the intermediate layer, and then O2-RIE is applied to the lower layer. |
