| 摘要 |
PURPOSE:To obtain a semiconductor dynamic sensor which reduces the sensitivity in the other axial directions than a detecting axial direction and restricts the output change due to the change of the applied voltage. CONSTITUTION:A semiconductor acceleration sensor 100 is formed of a semiconductor substrate 11 processed in the cantilever structure. Four semiconductor strain gauges 21, 22, 23, 24 are formed at the surface opposite to a groove part 14 of a thin part 16 of the sensor. The strain gauges are symmetric each other to a center line L in the widthwise direction of a bend in the detecting axial direction (Z-axis direction) which is the direction of a normal line of the thin part 16, and orientated alternately. The strain gauges are connected between a voltage impressing terminal VCC and output terminals VX, VY in a full bridge circuit or between output terminals VX, VY and a grounding terminal GND. Accordingly, even when the sensor is bent in the other axial direction or the impressing voltage is changed, the voltage difference between both output terminals of the full bridge circuit can be eliminated and the detecting accuracy is improved. |
