| 摘要 |
PURPOSE:To obtain high contrast by preventing an absorber (reflector) from being corroded, and patterning the absorber (reflector) while keeping the reflectance of the reflector (absorber) at the time of finishing the etching of the reflector (absorber.) CONSTITUTION:A reflector film 3 and an absorber film 1 are laminated in this order or the reverse order on a mask board 4, and the film of the highest layer is patterned for this mask. Corresponding to the etching condition of the reflector film 3 or the absorber film 1 in the case of patterning, a protection film 2 composed of any material, which etch rate is lower than that of these films, is sandwiched between the reflector film 3 and the absorber film 1. The protection film 2 is composed of diamon pattern carbon, the reflector film 3 is composed of metal containing Al, and the absorber film 1 is composed of metal containing Cr. The plasma of chlorine gas or fluorine gas is used for etching the reflector film 3 or the absorber film 1, and oxygen plasma is used for etching the protection film 2. |
