发明名称 FORMING METHOD OF PHOTOMASK PATTERN, EXPOSING METHOD OF NEGATIVE PHOTOSENSITIVE RESIN, AND SUBSTRATE
摘要 PURPOSE:To enable a negative photosensitive resin to be exposed to light without forming the image of a foreign object with an unmodified conventional device by a method wherein a photomask pattern is formed based on the calculation of the size of a foreign object attached to the photomask. CONSTITUTION:A pattern 5, where a required figure is enlarged along a certain direction to be larger than the maximum length of the projection of a foreign object expected to be attached to a photomask 1, is provided. The pattern 5 is transferred onto a negative photosensitive resin 6 on a substrate 8, the photomask 1 and the substrate 8 are aligned with each other, and then the photosensitive resin 6 is exposed to light. Then, the photomask 1 is made to move in a certain direction by a distance longer than the maximum length of the projection of a foreign object attached to the photomask 1, and then the photosensitive resin 6 is exposed to light again. By this setup, a cleanable photomask can be designed without using a pellicle, an aligning operation can be carried out at once, a conventional device is not required to be modified, and the image of a foreign object on a photomask is not formed.
申请公布号 JPH05335196(A) 申请公布日期 1993.12.17
申请号 JP19920134549 申请日期 1992.05.27
申请人 HITACHI LTD 发明人 NISHIKAME MASASHI;MATSUYAMA HARUHIKO;YOSHIMOTO MITSUO
分类号 G03F1/00;G03F1/68;H01L21/027;H01L21/28 主分类号 G03F1/00
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