| 摘要 |
<p>PURPOSE:To form a thin film transistor having characteristics in which thicknesses of channels of i-type semiconductor films are substantially uniform at positions to be formed with transistors by substantially uniformly etching all n-type semiconductor films formed at the positions to be formed with the transistors on a substrate. CONSTITUTION:Before channel corresponding parts of n-type semiconductor films 16 formed at positions to be formed with transistors on a substrate 11 are removed by etching, it is so oxidized that a thick oxide film 16a is generated on the film 16 of a region in which etching advancing is fast and a thin oxide film 16a is generated on the film 16 of a region in which etching advancing speed is low, and then the films 16 are etched.</p> |
