SEMICONDUCTOR FIELD EFFECT DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To realize both n-type and p-type lateral FET structures on the same substrate and to provide a simple method for manufacturing the same. CONSTITUTION:The semiconductor field effect device comprises a channel 4 made of a slender n-type or p-type region formed on a semi-insulating semiconductor substrate 1, and gate regions 5, 6 made of n-type or p-type region formed at a suitable gap from the channel 4 on the substrate 1 at both sides of the channel 4.