Process for producing aluminium doping profile in semiconductors - by diffusion in vacuum and oxidising atmosphere

摘要

Al doping profile is produced in a Si semiconductor body by coating or implanting a region near the surface of the body and diffusing in by a a treatment initially in vacuum at e.g. 1230 deg.C for 10 hrs. The Al is then diffused in to a greater depth by treatment in an oxidising atmos. e.g. at 1240 deg.C for 20 hrs. Initial depth of diffusion is 1/3-2/3 of the final depth. ADVANTAGE - Interaction between Al with Si oxide layers is reduced.