| 摘要 |
<p>A solid state imaging device of the present invention includes: a semiconductor substrate of one conductive type; a well layer made of a semiconductor of the other conductive type formed on the semiconductor substrate; a photodetecting portion made of a semiconductor of one conductive type formed in an upper portion of the well layer; a high concentration semiconductor layer made of the other conductive type formed in an upper portion of the photodetecting portion; a first region of one conductive type formed in an upper portion of the semiconductor substrate, being in contact with the well layer and positioned at least below the photodetecting portion, having higher concentration than the semiconductor substrate; and a second region of the other conductive type formed in a lower portion of the well layer, being in contact with the semiconductor substrate and positioned on the first region. <IMAGE></p> |
