发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION AND RESIST PATTERN PRODUCING METHOD |
摘要 |
PURPOSE:To obtain a positive type photoresist compsn. having high resolution, capable of giving a resist pattern fit for fine. processing and especially useful in the production of a semiconductor device. CONSTITUTION:A compsn. contg. an alkali-soluble resin and a 1,2-quinonediazido compd. is blended with a compd. represented by the formula [where (n) is an integer of 1-25] to obtain the objective positive type photoresist compsn. A resist pattern is produced with this photoresist compsn. |
申请公布号 |
JPH05323602(A) |
申请公布日期 |
1993.12.07 |
申请号 |
JP19920132961 |
申请日期 |
1992.05.26 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
NUNOMURA MASATAKA;HASHIMOTO MICHIAKI |
分类号 |
G03F7/022;H01L21/027;(IPC1-7):G03F7/022 |
主分类号 |
G03F7/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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