发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION AND RESIST PATTERN PRODUCING METHOD
摘要 PURPOSE:To obtain a positive type photoresist compsn. having high resolution, capable of giving a resist pattern fit for fine. processing and especially useful in the production of a semiconductor device. CONSTITUTION:A compsn. contg. an alkali-soluble resin and a 1,2-quinonediazido compd. is blended with a compd. represented by the formula [where (n) is an integer of 1-25] to obtain the objective positive type photoresist compsn. A resist pattern is produced with this photoresist compsn.
申请公布号 JPH05323602(A) 申请公布日期 1993.12.07
申请号 JP19920132961 申请日期 1992.05.26
申请人 HITACHI CHEM CO LTD 发明人 NUNOMURA MASATAKA;HASHIMOTO MICHIAKI
分类号 G03F7/022;H01L21/027;(IPC1-7):G03F7/022 主分类号 G03F7/022
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