| 摘要 |
<p>PURPOSE:To provide the TFT(thin film transistor) panel which prevents electrostatic breakdown and can inspect a short-circuit defect between the gate electrode and drain electrode of a TFT, and a gate line and a data line while the electrostatic breakdown is prevented. CONSTITUTION:At the edge part of a substrate 1, a 1st electrode 11 of large area with which at least one end of a gate line GL connects and a 2nd area 12 of large area which connects with at least one end of a data line DL and faces the 1st electrode 11 across an insulating layer !13, and a large-capacity capacitor C is formed of the 1st and 2nd electrodes 11, 12 and insulating layer 13 between them.</p> |
