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发明名称
Nichtflüchtige latente Speicherzelle mit reduzierter Tunneleffektschaltung für verbesserte Betriebssicherheit.
摘要
申请公布号
DE3885191(D1)
申请公布日期
1993.12.02
申请号
DE19883885191
申请日期
1988.07.29
申请人
SGS-THOMSON MICROELECTRONICS, INC. (N.D.GES.DES STAATES DELAWARE), CARROLLTON, TEX., US
发明人
O'BRIEN, GEORGE DATER, SCOTTSDALE ARIZONA 85260, US
分类号
G11C17/00;G11C14/00;G11C16/04;(IPC1-7):G11C14/00
主分类号
G11C17/00
代理机构
代理人
主权项
地址
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