发明名称 X-RAY MASK
摘要 <p>PURPOSE:To provide an X-ray mask wherein the film thickness of an antireflection film can be controlled easily when the film is formed by a method wherein the visible-ray transmission factor of a membrane is increased, the accuracy of an alignment operation is enhanced and the antireflection characteristic of a wide band is obtained. CONSTITUTION:An SiC film 2 is used as an X-ray transmitting substrate; an antireflection film 52 which is composed of a TiO2 film or of a mixed film of SiO2 and TiO2 and whose refractive index is within a range of 1.5 to 1.8 is provided at least on one face of the SiC film.</p>
申请公布号 JPH05315228(A) 申请公布日期 1993.11.26
申请号 JP19920113472 申请日期 1992.05.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 MARUMOTO KENJI;AYA ATSUSHI;YABE HIDETAKA;HASHIMOTO MOTOKO;MATSUI YASUTSUGU
分类号 G03F1/00;G03F1/22;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/00
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