发明名称 METHOD FOR DRIVING GATE OF IGBT
摘要 PURPOSE:To relax the time change rate of a voltage between the collector and emitter of an IGBT at the time of turning on the IGBT and to reduce a collector loss at the time of transition and a steady state. CONSTITUTION:A serial-parallel connection constituted by connecting a serial connection between a constant voltage diode ZD1 and a resistor R1 in parallel with a resistor R2 having a resistance value larger than that of the resistor R2 is inserted between a forward bias DC power supply having voltage Ef and a transistor(TR) element Tc1 in a photocoupler and an IGBT gate voltage formed in the gate of the IGBT 1 by the voltage Ef impressed through a gate resistor R3 and the parallel-serial connection and used as an envelope voltage of two kinds of component voltages having final voltage values different from respective time constants is used as a required gate voltage VG.
申请公布号 JPH05315917(A) 申请公布日期 1993.11.26
申请号 JP19920115044 申请日期 1992.05.08
申请人 FUJI ELECTRIC CO LTD 发明人 MATSUMOTO YOSHIHIRO
分类号 H03K17/56;H03K17/00;H03K17/04;H03K17/60 主分类号 H03K17/56
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