发明名称 MINUTE METALLIC WIRING STRUCTURE
摘要 PURPOSE:To provide a minute metallic wiring structure for large-scale integrated circuits which can strongly resist against both electromigration and stress migration. CONSTITUTION:In the title structure, at least part of the grain boundary 201a of a metallic wiring film which is formed on a substrate 202 and contains aluminum as a constituent element does not coincide with the normal direction to the substrate 303 and at least part of the angles between the normal direction to the substrate 202 and the boundary 201a becomes >=20 deg.. Since the boundary 201a has the angle of >=20 deg. against the normal direction to the substrate 20, the stress applied to the boundary 201a is reduced as compared with the case where the boundary 201a coincides with the normal direction to the substrate 20 and the occurrence of disconnection in metallic wiring is remarkably reduced. Therefore, wiring having a good stress migration resistance and long service life can be formed.
申请公布号 JPH05315283(A) 申请公布日期 1993.11.26
申请号 JP19930012754 申请日期 1993.01.28
申请人 RICOH CO LTD;RICOH RES INST OF GEN ELECTRON 发明人 SUZUKI YUKIE;OTAKA KOICHI;KAWASHIMA IKUE;HIKIJI SHUICHI
分类号 H01L21/28;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):H01L21/28;H01L21/320 主分类号 H01L21/28
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