| 摘要 |
PURPOSE:To enhance the positional accuracy of an X-ray absorber pattern by a method wherein a silicon substrate is etched back, a rear protective layer is then formed in an etched part, the X-ray absorber pattern is formed on the surface on the rear side and, after that, the rear protective layer is removed. CONSTITUTION:A silicon substrate 1 is etched back by making use of a thin film 4 for mask use as a mask; a thin film which is formed of a thin film 2 for membrane use and of an X-ray absorber layer 3 is formed. In the process, the thin film 2 for membrane use is shrunk due to an internal stress; it becomes stable in a state that a very small warp has been caused in a silicon frame. As a result, a patterning operation is performed after an etching-back operation. As a result, it is possible to restrain that a strain is caused in the film more than that, and the positional accuracy of a pattern is increased. The X-ray absorber layer 3 is patterned while a rear protective layer 5 has been applied. Since the rear of the membrane is provided with the rear protective layer 5, the membrane which is composed of the thin film 2 for membrane use and of the X-ray absorber layer 3 is not destroyed. |
