| 摘要 |
2134340 9323246 PCTABS00028 The aluminum nitride metallized structure (10) of the present invention includes a substrate (11) comprising an AlN sintered body and a metallized structure (21) formed on the substrate comprising a first layer (12) deposited on the sintered body and a second (B) layer deposited on the first layer (12). The first layer (12) comprises an alloy having the general formula (a) based on atomic percent: XxZ100-x wherein X is at least one member selected from the group consisting of Ti, Zr, Hf and the rare earth elements, Z is at least one member selected from the group consisting of Mo, W, Cr, Nb, V and Ta, and 10 < x < 60 atomic %. The second layer (13) comprises at least one member selected from the group consisting of Au, Co, Cu, Ni, and Fe.
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