发明名称 |
Method of manufacturing a solid state image sensing device |
摘要 |
In a solid state image sensing device comprising: a semiconductor substrate; a photosensitive pixel area disposed on the semiconductor substrate for generating signal charges in response to incident light and storing the signal charges; a charge transfer area disposed adjacent to the photosensitive pixel area for transferring the signal charges stored in the photosensitive pixel area; and a transfer electrode provided above the charge transfer area, the solid state image sensing device comprises: a high melting temperature metal layer composed of molybdenum silicide MoSi formed above the transfer electrode and an insulating layer having ample thickness formed between the high melting temperature metal layer and the transfer electrode. The light shielding efficiency can be improved and occurrence of a smear phenomenon can be prevented in the resulting device.
|
申请公布号 |
US5264374(A) |
申请公布日期 |
1993.11.23 |
申请号 |
US19910694768 |
申请日期 |
1991.05.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE, KAZUNARI;NOZAWA, HIROSHI |
分类号 |
H01L27/148;(IPC1-7):H01L21/339 |
主分类号 |
H01L27/148 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|